KUALA LUMPUR, Aug 17 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB”, that use Toshiba’s new Small Transistor Outline Gull-wing Leads (S-TOGL) package with U-MOS IX-H process chips.
According to a statement, safety-critical applications like autonomous driving systems ensure reliability through redundant design, with the result that they integrate more devices and require more mounting space than standard systems.
Accordingly, advancing size reductions in automotive equipment requires power MOSFETs that can be mounted at high current densities.
Toshiba’s new S-TOGL package (7.0mm×8.44mm) features a post-less structure unifying the source connective part and outer leads, with a multi-pin structure for the source leads that decreases package resistance.
The combination of the S-TOGL package and Toshiba's U-MOS IX-H process achieve a significant On-resistance reduction of 11 per cent against Toshiba's TO-220SM (W) package product, which has the same thermal resistance characteristics.
The new package also cuts the required mounting area by approximately 55 per cent against the TO-220SM(W) package.
Overall, the S-TOGL package realises high-density and compact layouts, reduces the size of automotive equipment and contributes to high heat dissipation as well as uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.
Toshiba will continue to expand its product line-up of power semiconductor products and contribute to the realisation of carbon neutrality with more user-friendly, high-performance power devices.
-- BERNAMA
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