Toshiba's 1200V silicon carbide MOSFET contributes high-efficiency power

Toshiba: a 1200V silicon carbide (SiC) MOSFET TW070J120B for industrial equipment including large capacity power supply. (Graphic: Business Wire)

KUALA LUMPUR, Oct 19 -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched ‘TW070J120B’, a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply, with shipments beginning today.

The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products, therefore contributing to lower power consumption and system downsizing.

Fabricated with Toshiba’s second-generation chip design, which improves the reliability of SiC MOSFET, the new device realises low input capacitance, a low gate-input charge, and low drain-to-source On-resistance, according to a statement.

Compared with ‘GT40QR21’, Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), it cuts turn-off switching loss by about 80 per cent and switching time (fall time) by about 70 per cent, while delivering low On-voltage characteristics with a drain current of 20A or less.

The new MOSFET will contribute to higher efficiency by reducing power loss in industrial applications, such large capacity AC-DC converters, photovoltaic inverter, and large capacity bidirectional DC-DC converters, and will also contribute to reduced equipment size.

Details on Toshiba Electronic Devices & Storage Corporation at https://toshiba.semicon-storage.com/ap-en/top.html

-- BERNAMA