KUALA LUMPUR, Sept 1 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series” that use a four-pin TO-247-4L(X) package that reduces switching loss with its latest third generation SiC MOSFETs chip for industrial equipment.
According to Toshiba in a statement, volume shipments of 10 products, five with 650 volt (V) ratings and five with 1200V, have started.
The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive.
The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance.
For the new TW045Z120C, the turn-on loss is approximately 40 per cent lower and the turn-off loss reduced by approximately 34 per cent, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package, which helps to reduce equipment power loss.
A supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.
-- BERNAMA
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